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11. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 11 of 15 BLF188XR; BLF188XRS Power LDMOS transistor Fig 13. Package outline SOT539B References Outline version European projection Issue date IEC JEDEC JEITA SOT539B sot539b_po 12-05-02 13-05-24 Unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 A Dimensions Earless flanged balanced ceramic package; 4 leads SOT539B bc 0.18 0.10 DD 1 EE 1 e 13.72 FHH 1 25.53 25.27 LQ 2.26 2.01 U 1 32.39 32.13 U 2 w 2 0.25 inches max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c E Q E 1 e H L b H 1 U 1 U 2 D w 2 w 3 1 2 3 4 D D A F D 1 5 Note 1. millimeter dimensions are derived from the original inch dimensions.

15. BLF188XR; BLF188XRS Power LDMOS transistor © Ampleon B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.co m/sales Date of release: 1 September 2015 Document identifier: BLF188XR_BLF188XRS#6 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal informat ion’. 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1 Ruggedness in class-AB oper ation . . . . . . . . . 5 7.2 Impedance information. . . . . . . . . . . . . . . . . . . 5 7.3 UIS avalanche energy . . . . . . . . . . . . . . . . . . . 5 7.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.5.1 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Handling information. . . . . . . . . . . . . . . . . . . . 12 10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 Contact information. . . . . . . . . . . . . . . . . . . . . 14 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

14. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 14 of 15 BLF188XR; BLF188XRS Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampl eon product is automotive qualifi ed, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and u se in automotive applications to automotive specifications and standa rds, customer (a) shall use the product without Ampleon’ warranty of the prod uct for such automotive applications, use and s pecifications, and (b) whenev er customer uses the product for automotive applications beyond Ampleon’ sp ecifications such use shall be solely at customer’s own risk, and (c) custom er fully indemnifies Ampleon for any liability, damages or failed produc t claims resulting from customer design and use of the product for autom otive applications beyond Ampleon’ standard warranty and Ampleon’ pro duct specifications. Translations — A non-English (translated) version of a document is for reference only. The English vers ion shall prevail in case of an y discrepancy between the translated and English versions. 12.4 Licenses 12.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liabi lity or entitlement vis-à-vis the owner o f this trademark. Ampleon is n o longer part of the NXP group of companies and any reference to or use of the ‘ NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liabi lity or entitlement vis-à-vis the owner o f this trademark. Ampleon is n o longer part of the NXP group of companies and any reference to or use of the ‘ NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addre sses, please visit: http://www.ampleon.com/sales ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents o f the DVB-T respectively the DVB-T2 p atent portfolio, which license i s available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties.

8. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 8 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 7.5 Graphical data The following figures are measured in a class-AB production tes t circuit. 7.5.1 1-Tone CW pulsed V DS = 50 V; I Dq = 40 mA; f = 108 MHz; t p = 100  s;  =20%. V DS = 50 V; I Dq = 40 mA; f = 108 MHz; t p = 100  s;  =20%. (1) P L(1dB) = 61.58 dBm (1440 W) (2) P L(3dB) = 61.98 dBm (1580 W) Fig 6. Power gain and drain efficiency as function of output power; typical values Fig 7. Output power as a function of input power; typical values aaa-009589 0 320 640 960 1280 1600 18 0 20 16 22 32 24 48 26 64 28 80 P L (W) G p G p (dB) ( d B ) (dB) η D η D (%) ( % ) (%) G p G p η D η D aaa-009590 P i (dBm) 28 42 34 32 30 36 40 38 66 P L (dBm) 54 56 58 60 62 64 ldeal P L P L (1) (2)

7. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 7 of 15 BLF188XR; BLF188XRS Power LDMOS transistor [1] American Technical Ceramics t ype 800B or capacitor of same q uality. [2] American Technical Ceramics t ype 100B or capacitor of same q uality. Table 11. List of components For test circuit see Figure 5 . Component Description Value Remarks C1, C2, C6, C7, C16, C17, C23, C24 multilayer ceramic chip capacitor 1000 pF [1] C3 multilayer ceramic chip capacitor 47 pF [2] C4 multilayer ceramic chip capacitor 39 pF [1] C5 multilayer ceramic chip capacitor 200 pF [1] C8, C9, C14, C15 multilayer ceramic chip capacitor 4.7  F, 100 V TDK C5750X7R2A475KT C10, C11 electrolytic capacitor 2200  F, 63 V C12, C13 electrolytic capacitor 470  F, 63 V C18, C19 multilayer cerami c chip capacitor 120 pF [1] C20 multilayer ceramic chip capacitor 82 pF [1] C21 multilayer ceramic chip capacitor 120 pF [1] C22 multilayer ceramic chip capacitor 56 pF [1] L1, L2, L3, L4 1.5 turn 0.8 mm copper wire D = 3.2 mm, length = 1.6 mm L5, L6 5.0 turn 0.8 mm co pper wire D = 3.0 mm, length=4mm L7, L8 2.5 turn 0.8 mm copper wire D = 3.0 mm, length = 2.4 mm R1, R2 resistor 9.1  SMD 1206 T1 semi rigid coax 25  , length = 160 mm Micro-Coax UT-090C-25 T2 semi rigid coax 25  , length = 160 mm Micro-Coax UT-141C-25

6. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 6 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 7.4 Test circuit Fig 4. Non-repetitive avalanche energy as a function of single p ulse avalanche current, typical values aaa-009884 30 35 40 45 50 55 1 2 3 4 5 6 I AS (A) E AS A S E AS (J) ( J ) (J) Printed-Circuit Board (PCB): RF 35;  r = 3.5; thickness = 0.765 mm; thickness copper plating = 35  m, gold plated. See Table 11 for a list of components. Fig 5. Component layout for class-AB production test circuit L5 C14 C12 R1 R2 C8 C9 C6 C7 C13 C16 C19 C15 C18 C17 L6 C20 C21 C10 L7 C23 T2 C22 C24 C11 L8 T1 53.9 mm 22.7 mm 25.33 mm L4 L2 C2 L3 C5 C3 L1 C1 95 mm 95 mm 80 mm aaa-009588 C4

12. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 12 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 9. Handling information 10. Abbreviations 11. Revision history CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Obse rve precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or equivalent standards. Table 12. Abbreviations Acronym Description CW Continuous Wave DVB-T Digital Video Broadcast - Terrestrial ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure SMD Surface Mounted Device UIS Unclamped Inductive Switching VSWR Voltage Standing-Wave Ratio Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF188XR_BLF188XRS v.6 20150901 Product data sheet - BLF188XR_BLF18 8XRS v.5 Modifications: • The format of this do cument has been rede signed to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new co mpany name where app ropriate. BLF188XR_BLF188XRS v.5 20131112 Product data sheet - BLF188XR_BLF18 8XRS v.4 BLF188XR_BLF188XRS v.4 20131030 Product data sheet - BLF188XR_BLF18 8XRS v.3 BLF188XR_BLF188XRS v.3 20130801 Objective data sheet - BLF188XR_BLF 188XRS v.2 BLF188XR_BLF188XRS v.2 20130712 Objective data sheet - BLF188XR_BLF 188XRS v.1 BLF188XR_BLF188XRS v.1 20130506 Objective data sheet - -

5. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 5 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLF188XR and BLF188XRS are ca pable of withstanding a load m ismatch corresponding to VSWR > 65 : 1 through all phases under the followi ng conditions: V DS = 50 V; I Dq = 40 mA; P L = 1400 W pulsed; f = 108 MHz. 7.2 Impedance information 7.3 UIS avalanche energy For information see application note “AN10273”. Fig 3. Definition of transistor impedance Table 9. Typical push-pull impedance Simulated Z i and Z L device impedance; impedance info at V DS = 50 V and P L =1400W. f Z i Z L (MHz) (  ) (  ) 108 2.94  j9.64 2.74 + j0.57 001aan207 gate 1 gate 2 drain 2 drain 1 Z i Z L Table 10. Typical avalanc he data per section T amb = 25  C; typical test data; test jig without water cooling. I AS E AS (A) (J) 35 4.5 40 3.4 45 2.4 50 2.0

1. 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Haz ardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications BLF188XR; BLF188XRS Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet Table 1. Application information Test signal f V DS P L G p  D (MHz) (V) (W) (dB) (%) CW 2 to 30 50 1270 29.0 75 27 50 1400 23.7 73 41 50 1200 22.0 82 60 48 1240 22.0 77 72.5 50 1350 23.1 83 81.4 50 1200 27.1 77.8 88 to 108 50 1320 22.5 85 108 50 1200 26.5 83 200 50 1288 19.3 68.3 pulsed RF 81.4 50 1200 25.8 85 81.4 50 1400 25.4 81 108 50 1400 24.0 73 DVB-T 174 to 230 50 225 23.8 29

13. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 13 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 12. Legal information 12.1 Data sheet status [1] Please consult the most recently issued document before init iating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definit ions”. [3] The product status of device(s) described in this document m ay have changed since this document was published and may diffe r in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com . 12.2 Definitions Draft — The document is a dra ft version only. The content is still unde r internal review and subject to formal approval, which may resul t in modifications or additions. Ampl eon does not give any represent ations or warranties as to the accuracy or completeness of information in cluded herein and shall have no liability for t he consequences o f use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sh eet is intended for quick reference only and should not be relied upon to conta in detailed and full information. For detailed and full information see the rel evant full data sheet, which is available on request via the local Ampleon sale s office. In case of any inconsistency or con flict with the short data sheet , the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agr eed between Ampleon and its customer, unless Ampleon and customer have expl icitly agreed otherwise in writing. In no event however, shall an agre ement be valid in which the Ampleon product is deemed to offer functions and q ualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such informati on and shall have no liability fo r the consequences of use of such information. Ampleon takes no respo nsibility for the content in this document if provided by an information sour ce outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidenta l, punitive, special or consequential damages (including - without limitatio n - lost profits, lost savings, business interruption, costs related to the remov al or replacement of any products or rework charges) whether or not s uch damages are based on tort (including negligence), warranty, bre ach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any r eason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordanc e with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limit ation specifications and product descriptions, at any time and withou t notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malf unction of an Ampleon product can reasonably be expected to result in persona l injury, death or severe property or environmental damage. Ampleon and i ts suppliers accept no liability for inclusion and/or use of Ample on products in such equipment or applications and therefore such inclusion and /or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no r epresentation or warranty that such applications will be suitable for the spe cified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no lia bility for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as we ll as for the planned application and use of customer’s third party customer( s). Customers should provide appropriate design and operating safeguards to m inimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, d amage, costs or problem which is based on any weakness or default in the custom er’s applications or products, or the application or use by customer ’s third party customer(s). Customer is respons ible for doing all necessary te sting for the customer’s applications and pr oducts using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party c ustomer(s). Ampleon does not acc ept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause per manent damage to the device. Limiting values are stress ratings only a nd (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or th e Characteristics sections of this document is not warranted. Con stant or repeated exposure to limiting values will permanently and irrev ersibly affect the quality and relia bility of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is conclu ded only the terms and conditions of the respective agreement shall apply. A mpleon hereby expressly objects to appl ying the customer’s general ter ms and conditions with regard to the purchase of Ampleon products by c ustomer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for accepta nce or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might requ ire a prior authorization from competent authorities. Document status [1] [2] Product status [3] Definition Objective [short] data sheet Deve lopment This document contains d ata from the objective specification for product development. Preliminary [short] data sheet Qualification This document contai ns data from the preliminary specification. Product [short] data sheet Produc tion This document contains the product specification.

9. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 9 of 15 BLF188XR; BLF188XRS Power LDMOS transistor V DS = 50 V; f = 108 MHz; t p = 100  s;  =20%. (1) I Dq =20mA (2) I Dq =40mA (3) I Dq =80mA (4) I Dq = 160 mA V DS = 50 V; f = 108 MHz; t p = 100  s;  =20%. (1) I Dq =20mA (2) I Dq =40mA (3) I Dq =80mA (4) I Dq = 160 mA Fig 8. Power gain as a fu nction of output power; typical values Fig 9. Drain efficiency as a function of output power; typical values I Dq = 40 mA; f = 108 MHz; t p = 100  s;  =20%. (1) V DS =25V (2) V DS =30V (3) V DS =35V (4) V DS =40V (5) V DS =45V (6) V DS =50V I Dq = 40 mA; f = 108 MHz; t p = 100  s;  =20%. (1) V DS =25V (2) V DS =30V (3) V DS =35V (4) V DS =40V (5) V DS =45V (6) V DS =50V Fig 10. Power gain as a function of output power; typical values Fig 11. Drain efficiency as a function of output power; typical values aaa-009591 0 200 400 600 800 1000 1200 1400 1600 18 20 22 24 26 28 P L (W) G p G p (dB) ( d B ) (dB) (4) ( 4 ) (4) (3) ( 3 ) (3) (2) ( 2 ) (2) (1) ( 1 ) (1) aaa-009592 0 200 400 600 800 1000 1200 1400 1600 0 16 32 48 64 80 P L (W) η D η D (%) ( % ) (%) (4) ( 4 ) (4) (3) ( 3 ) (3) (2) ( 2 ) (2) (1) ( 1 ) (1) aaa-009593 0 200 400 600 800 1000 1200 1400 1600 18 20 22 24 26 28 P L (W) G p G p (dB) ( d B ) (dB) (1) ( 1 ) (1) (2) ( 2 ) (2) (3) ( 3 ) (3) (4) ( 4 ) (4) (5) ( 5 ) (5) (6) ( 6 ) (6) aaa-009594 0 200 400 600 800 1000 1200 1400 1600 0 20 40 60 80 P L (W) η D η D (%) ( % ) (%) (1) ( 1 ) (1) (2) ( 2 ) (2) (3) ( 3 ) (3) (4) ( 4 ) (4) (5) ( 5 ) (5) (6) ( 6 ) (6)

2. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 2 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values [1] Continuous use at maximum tem perature will affect the reliab ility, for details refer to the on-line MTF calculator Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF188XR (SOT539A) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF188XRS (SOT539B) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 4 3 4 3 5 1 2 sym117 5 12 4 3 4 3 5 1 2 sym117 Table 3. Ordering information Type number Package Name Description Version BLF188XR - flanged balanced ceram ic package; 2 mounting holes; 4 lea ds SOT539A BLF188XRS - earless flanged balanced ceramic package; 4 leads SOT53 9B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage - 135 V V GS gate-source voltage  6+11V T stg storage temperature  65 +150  C T j junction temperature [1] - 225  C

4. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 4 of 15 BLF188XR; BLF188XRS Power LDMOS transistor I DSS drain leakage current V GS =0V; V DS =50V - - 2.8  A I DSX drain cut-off current V GS =V GS(th) +3.75 V; V DS =10V -77-A I GSS gate leakage current V GS = 11 V; V DS = 0 V - - 280 nA R DS(on) drain-source on-state resistance V GS =V GS(th) + 3.75 V; I D =19.25A -0.08-  Table 7. AC characteristics T j = 25  C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit C rs feedback capacitance V GS =0V; V DS =50V; f=1MHz - 6.2 - pF C iss input capacitance V GS =0V; V DS = 50 V; f = 1 MHz - 582 - pF C oss output capacitance V GS =0V; V DS = 50 V; f = 1 MHz - 212 - pF Table 8. RF characteristics Test signal: pulsed RF; t p = 100  s;  = 10 %; f = 108 MHz; RF performance at V DS =50V; I Dq =40mA; T case = 25  C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit G p power gain P L = 1400 W 23.2 24.4 - dB RL in input return loss P L = 1400 W -  21  14 dB  D drain efficiency P L = 1400 W 69 73 - % V GS = 0 V; f = 1 MHz. Fig 2. Output capacitanc e as a function of dr ain-source voltage; typical values per section Table 6. DC characteristics ...continued T j = 25  C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit aaa-009587 0 10 20 30 40 50 0 200 400 600 800 1000 1200 V DS (V) C oss o s s C oss (pF) ( p F ) (pF)

3. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 3 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 5. Thermal characteristics [1] T j is the junction temperature. [2] R th(j-c) is measured under RF conditions. [3] See Figure 1 . 6. Characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-c) thermal resist ance from junc tion to case T j = 150  C [1] [2] 0.10 K/W Z th(j-c) transient thermal impedance from junction to case T j =150  C; t p =100  s;  =20% [3] 0.03 K/W (1)  = 1 % (2)  = 2 % (3)  = 5 % (4)  = 10 % (5)  = 20 % (6)  = 50 % (7)  = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as a fu nction of pulse duration aaa-009586 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 0 0.05 0.1 0.15 0.2 t p (s) Z th(j-c) t h ( j - c ) Z th(j-c) (K/W) ( K / W ) (K/W) (7) ( 7 ) (7) (6) ( 6 ) (6) (5) ( 5 ) (5) (4) ( 4 ) (4) (3) ( 3 ) (3) (2) ( 2 ) (2) (1) ( 1 ) (1) Table 6. DC characteristics T j = 25  C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V (BR)DSS drain-source breakdown voltage V GS =0V; I D =5.5mA 135 - - V V GS(th) gate-source threshold voltage V DS =10 V; I D = 550 mA 1.25 1.9 2.25 V V GSq gate-source quiescent voltage V DS =50 V; I D =20mA 0.68 1.5 1.88 V

10. BLF188XR_BLF188XRS#6 All information provided in this document i s subject to legal disclaimers. © Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 — 1 September 2015 10 of 15 BLF188XR; BLF188XRS Power LDMOS transistor 8. Package outline Fig 12. Package outline SOT539A REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT539A 12-05-02 10-02-02 0 5 10 mm scale p A F b e D U 2 L H Q c 5 12 4 3 D 1 E A w 1 AB M M M q U 1 H 1 C B M M w 2 C E 1 M w 3 UNIT A mm D b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e U 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 F 1.75 1.50 U 1 41.28 41.02 H 1 25.53 25.27 p 3.30 3.05 Q 2.26 2.01 EE 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 D 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 H 3.48 2.97 0.137 0.117 L DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

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